亚微米mosfet横向扩散曲线的测量

Proceedings of the 1991 International Conference on Microelectronic Test Structures Pub Date : 1990-03-18 DOI:10.1109/ICMTS.1990.161734

K. Kubota, Y. Kawashima, S. Yoshida, M. Ishida

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引用次数: 1

摘要

提出了一种测定mosfet横向扩散曲线的简单方法。该方法比较栅极偏置累加的MOSFET栅极-衬底电容，源极和漏极略正向偏置的MOS电容与无扩散的MOS电容的栅极-衬底电容。研究结果可用于亚微米器件的优化设计和二维扩散的建模

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Measurement of lateral diffusion profiles for submicrometer MOSFETs

A simple method is proposed to determine lateral diffusion profiles for MOSFETs. The method compares the gate-to-substrate capacitance for a MOSFET with the gate biased in accumulation and the source and drain slightly forward-biased to that for a MOS capacitor with no diffusions. The results can be utilized for optimal design of submicrometer devices and modeling of two-dimensional diffusion.<>

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Proceedings of the 1991 International Conference on Microelectronic Test Structures

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