Dam Yun, Haneul Kim, Dongwoo Baek, Sangik Cho, Jehyung Yoon, Jungbong Lee
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引用次数: 2
摘要
为了支持高密度、高数据速率的固态硬盘存储,提出了一种基于实时的同步升压变换器,该变换器采用了一种新的反向相位纹波注入(RPRI)补偿方法。所提出的RPRI补偿方法具有快速的负载暂态响应稳定性。此外,所提出的自适应导通(AOT)发生器在连续导通模式(CCM)下将开关频率固定为常数。此外,所提出的RPRI和AOT控制方法允许CCM(连续传导模式)和DCM(间断传导模式)模式之间的平滑模式转换。该升压变换器采用BCD 0.13 μm工艺制造,芯片尺寸为2.4 mm × 0.93 mm。典型输入电压为3.3V,输出电压为12V。实验结果表明,在100mA/μs的速度下,动态负载从1mA调节到350mA的效率为±1.6%,峰值功率效率为90.3%。在300mA负载变化情况下,该升压变换器的开关频率变化较小,为ΔFSW/FSW = 1%。
A Fixed-Frequency Synchronous Boost Converter Based on Adaptive On-Time Control with a New Reverse Phase Ripple Injection Compensation
The on-time based synchronous boost converter with a new reverse phase ripple injection (RPRI) compensation method has been presented in order to support high density and high data rate SSD (Solid State Drive) memory. The proposed RPRI compensation method achieves stability with a fast load transient response. Moreover, the proposed adaptive on-time (AOT) generator fixes switching frequency as constant in a continuous conduction mode (CCM). In addition, the proposed RPRI and AOT control method allows smooth mode transition between CCM (Continuous Conduction Mode) and DCM (Discontinuous Conduction Mode) mode. The proposed boost converter is manufactured by BCD 0.13 μm process and the chip size is 2.4 mm × 0.93 mm. The typical input voltage is 3.3V and the output voltage is 12V. We can achieve the measured results that ±1.6% of dynamic load regulation from 1mA to 350mA with 100mA/μs and the peak power efficiency is 90.3%. Also, the proposed boost converter achieves small switching frequency variation of ΔFSW/FSW = 1% in case of 300mA load change.