Pt/SrBi2Ta2O9/Hf-Al-O/Si MFIS场效应管的统计阈值电压分布和高温运算

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI:10.1109/ISAF.2007.4393168

Qiuhong Li, M. Takahashi, T. Horiuchi, T. Saito, Shouyu Wang, S. Sakai

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引用次数: 0

摘要

报道了p沟道和n沟道Pt/SrBi2Ta2O9/Hf-Al-O/Si铁电栅场效应晶体管(fefet)阈值电压Vth的统计分布。对于p沟道和n沟道fet, Vth的标准差分别在存储窗口的7-8%和3-5%之内。在27 ~ 85℃范围内研究了效应场效应管的温度依赖性。在高温下的分布测量显示出很小的标准差。在85°c下研究了数据保持特性，在超过105 s(近2天)的测量后，85°c下的通/关状态漏极电流比接近104。结果表明，在高达85℃的高温下，fet具有非易失性存储器的功能。

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Statistical Threshold-Voltage Distribution and Elevated-Temperature Operations of Pt/SrBi2Ta2O9/Hf-Al-O/Si MFIS FETs

Statistical distribution of the threshold voltage Vth for both p-and n-channel Pt/SrBi2Ta2O9/Hf-Al-O/Si ferroelectric-gate field-effect transistors (FeFETs) is reported. The standard deviations of Vth are within 7-8% and 3-5% of the memory window for the p-and n-channel FeFETs, respectively. The temperature dependence of FeFETs is also studied from 27 to 85degC. The distribution measurement at the elevated temperatures exhibits small standard deviations. Data retention characteristic is studied at 85degC and the ratio of on/off-state drain-current is nearly 104 at 85degC after more than 105 s (nearly 2 days) of the measurement. The results show that the FeFETs function as nonvolatile memories at elevated temperatures up to 85degC.

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2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

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