外延GaN反应离子刻蚀研究进展

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791612

F. Karouta, P. Vreugdewater, B. Jacobs, B.H. van Roy, O. Schoen, H. Protzmann, M. Heuken

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引用次数: 0

摘要

采用SiCl/sub - 4/、Ar和SF/sub - 6/等不同的化学物质，研究了在(0001)蓝宝石衬底上外延生长GaN的反应离子刻蚀(RIE)。等离子沉积的SiN/sub x/用于掩蔽。研究了气体流量、压力和射频功率对蚀刻速率和形貌的影响。在370伏加速电压下，使用SIC/sub 4/:Ar:SF/sub 6/ (10:10:2 sccm)可获得高达150 nm/min的高蚀刻速率。使用相同的化学方法，在105瓦的较低rf功率(直流偏置为/spl plusmn/290 V)下获得了非常光滑的表面和良好的蚀刻速率(/spl plusmn/100 nm/min)。

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Progress in reactive ion etching of epitaxial GaN

Reactive Ion Etching (RIE) of GaN epitaxially grown on (0001) sapphire substrate has been investigated using various chemistries based on SiCl/sub 4/, Ar and SF/sub 6/. Plasma deposited SiN/sub x/ is used for masking. We studied the influence of gas flow, pressure and RF-power on etch rate and morphology. High etch rates up to 150 nm/min can be obtained when using SIC/sub 4/:Ar:SF/sub 6/ (10:10:2 sccm) at an acceleration voltage of 370 Volts. Very smooth surfaces and good etch rates (/spl plusmn/100 nm/min) were obtained using the same chemistry at a lower RF-power of 105 Watts (DC-bias of /spl plusmn/290 V).

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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