氮化镓HFET技术中的器件退化现象:现状、机制和机遇

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346798

E. Piner, S. Singhal, P. Rajagopal, R. Therrien, J. Roberts, Tao Li, A. Hanson, J. W. Johnson, I. Kizilyalli, K. Linthicum

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引用次数: 13

摘要

AlGaN/GaN HFET器件表现出卓越的性能。为了使该技术获得商业认可，设备的长期稳定性必须符合严格的行业标准。我们回顾了GaN可靠性的现状，并将其与商业可行性的要求进行了对比。给出了缓冲漏损和栅极二极管正向失效的退化分析结果

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Device Degradation Phenomena in GaN HFET Technology: Status, Mechanisms, and Opportunities

AlGaN/GaN HFET devices demonstrate remarkable performance. For commercial acceptance of this technology, long-term device stability must meet stringent industry standards. We review the current status of GaN reliability and contrast it with the requirement for commercial viability. Results analyzing degradation pertaining to buffer leakage and gate diode forward failure is presented

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2006 International Electron Devices Meeting

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