M. Georgas, B. Moss, Chen Sun, J. Shainline, J. Orcutt, M. Wade, Yu-hsin Chen, Kareem Nammari, J. Leu, Aravind Srinivasan, Rajeev J Ram, M. Popović, V. Stojanović
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A monolithically-integrated optical transmitter and receiver in a zero-change 45nm SOI process
An optical transmitter and receiver with monolithically-integrated photonic devices and circuits are demonstrated together for the first time in a commercial 45nm SOI process, without any process changes. The transmitter features an interleaved-junction carrier-depletion ring modulator and operates at 3.5Gb/s with an 8dB extinction ratio and combined circuit and device energy cost of 70fJ/bit. The optical receiver connects to an integrated SiGe detector designed for 1180nm wavelength and performs at 2.5Gb/s with 15μA sensitivity and energy cost of 220fJ/bit.
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