原子力显微镜尖端诱导半导体表面性质的修饰

International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2012-07-02 DOI:10.1109/EDM.2012.6310237

A. Kozhukhov, D. Sheglov, A. Latyshev

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引用次数: 0

摘要

本文演示并应用了原子力显微镜(AFM)探针改变表面电位的方法。以纳米尺度局部原子力显微镜尖端诱导的异质外延AlGaAs/GaAs表面纳米修饰为例，证明了二维电子气体可逆调制的可能性。表面电位调制显示为100 mV，样品电阻变化为20-40 KOhm。用开尔文扫描探针显微镜(KSPM)检测表面电位变化。

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AFM tip-induced modification of semiconductor surface properties

The method to change surface potential by atomic force microscope (AFM) probe is demonstrated and used. The possibilities of two dimensional electron gas reversible modulations are demonstrated on the example of nanoscale local AFM tip-induced surface nanomodification of heteroepitaxial AlGaAs/GaAs. The surface potential modulation is shown to be 100 mV with sample resistance change being 20-40 KOhm. Surface potential change is detected by Kelvin Scanning Probe Microscopy (KSPM).

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International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices

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