P. Sun, P. Upadhyaya, Le Wang, DongHo Jeong, D. Heo
{"title":"用于宽带单片控制电路的0.18 μm SiGe BiCMOS工艺的高性能PIN二极管","authors":"P. Sun, P. Upadhyaya, Le Wang, DongHo Jeong, D. Heo","doi":"10.1109/EMICC.2006.282773","DOIUrl":null,"url":null,"abstract":"This paper presents a novel high isolation and low insertion loss broadband PIN diode implemented in a standard 0.18 μm SiGe BiCMOS process for upper X-band and lower Ku band LEO satellite phased array communication systems. By optimizing distance between anode and cathode terminals, the PIN diode overcomes the limitation of the common SiGe process which do not have customized etching step to remove the N-epi layer to build a high performance vertical PIN diode. Measurement shows that the PIN diodes achieve less than 1.09 dB insertion loss and isolation between 39dB to 13.67dB over DC to 18 GHz frequency. The PIN diode performance shows great potential for development of high performance MMICs in the standard SiGe processes","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"High Performance PIN Diode in 0.18-μm SiGe BiCMOS Process for Broadband Monolithic Control Circuits\",\"authors\":\"P. Sun, P. Upadhyaya, Le Wang, DongHo Jeong, D. Heo\",\"doi\":\"10.1109/EMICC.2006.282773\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a novel high isolation and low insertion loss broadband PIN diode implemented in a standard 0.18 μm SiGe BiCMOS process for upper X-band and lower Ku band LEO satellite phased array communication systems. By optimizing distance between anode and cathode terminals, the PIN diode overcomes the limitation of the common SiGe process which do not have customized etching step to remove the N-epi layer to build a high performance vertical PIN diode. Measurement shows that the PIN diodes achieve less than 1.09 dB insertion loss and isolation between 39dB to 13.67dB over DC to 18 GHz frequency. The PIN diode performance shows great potential for development of high performance MMICs in the standard SiGe processes\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282773\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Performance PIN Diode in 0.18-μm SiGe BiCMOS Process for Broadband Monolithic Control Circuits
This paper presents a novel high isolation and low insertion loss broadband PIN diode implemented in a standard 0.18 μm SiGe BiCMOS process for upper X-band and lower Ku band LEO satellite phased array communication systems. By optimizing distance between anode and cathode terminals, the PIN diode overcomes the limitation of the common SiGe process which do not have customized etching step to remove the N-epi layer to build a high performance vertical PIN diode. Measurement shows that the PIN diodes achieve less than 1.09 dB insertion loss and isolation between 39dB to 13.67dB over DC to 18 GHz frequency. The PIN diode performance shows great potential for development of high performance MMICs in the standard SiGe processes