近红外传感工业铸造工艺中的锗硅APD

2023 IEEE Silicon Photonics Conference (SiPhotonics) Pub Date : 2023-04-01 DOI:10.1109/SiPhotonics55903.2023.10141909

J. Rollinson, A. Chowdhury, R. Karlicek, M. Hella

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引用次数: 0

摘要

我们展示了一种通过改变电荷和倍增区域的几何形状来提高Ge-on-Si雪崩光电二极管(APD)灵敏度的方法，以实现更低的噪声电流。APD是在商业硅光子工艺中制造的，在940nm波长下显示出改进的信噪比(SNR)。

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Ge-on-Si APD in Commercial Foundry Process for Near-Infrared Sensing

We demonstrate a method for improving Ge-on-Si avalanche photodiode (APD) sensitivity by varying the geometry of the charge and multiplication regions to achieve lower noise current. The APD's, fabricated in a commercial silicon photonic process, demonstrate an improved signal-to-noise ratio (SNR) at 940nm wavelength.

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2023 IEEE Silicon Photonics Conference (SiPhotonics)

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