射频条件下40nm MOSFET射频参数的老化，从表征到射频设计的紧凑建模

2011 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2011-06-05 DOI:10.1109/RFIC.2011.5940645

L. Negre, D. Roy, F. Cacho, P. Scheer, S. Boret, A. Zaka, D. Gloria, G. Ghibaudo

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引用次数: 7

摘要

在混合模拟应用的MOSFET可靠性框架下，对射频参数退化进行了深入研究。提出了一种由直流和射频应力组成的创新流，该流具有直流和射频老化特性。对主要参数的降解动力学进行了物理解释，并利用PSP紧凑模型建立了退化动力学模型，以预测受应力器件的行为。

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Aging of 40nm MOSFET RF parameters under RF conditions from characterization to compact modeling for RF design

In the framework of MOSFET reliability for mixed-analog application, a deep investigation of RF parameters degradation is performed. An innovative flow, composed of DC and RF stress with DC and RF aging characterization, is presented. Degradation kinetics of main parameters are physically explained and modeled using PSP compact model to predict the behavior of stressed devices.

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2011 IEEE Radio Frequency Integrated Circuits Symposium

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