{"title":"皮秒Nd:GdVO4激光泵浦在912 nm","authors":"M. Nadimi, T. Waritanant, A. Major","doi":"10.1109/PN.2017.8090551","DOIUrl":null,"url":null,"abstract":"We report on the performance of a semiconductor saturable absorber mirror mode-locked Nd: GdVO4 laser in-band diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power with the pulse width of 16 ps, repetition rate of 85 MHz, optical efficiency of ∼ 50% and slope efficiency of 68%.","PeriodicalId":153736,"journal":{"name":"2017 Photonics North (PN)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Picosecond Nd:GdVO4 laser pumped at 912 nm\",\"authors\":\"M. Nadimi, T. Waritanant, A. Major\",\"doi\":\"10.1109/PN.2017.8090551\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the performance of a semiconductor saturable absorber mirror mode-locked Nd: GdVO4 laser in-band diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power with the pulse width of 16 ps, repetition rate of 85 MHz, optical efficiency of ∼ 50% and slope efficiency of 68%.\",\"PeriodicalId\":153736,\"journal\":{\"name\":\"2017 Photonics North (PN)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Photonics North (PN)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PN.2017.8090551\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Photonics North (PN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PN.2017.8090551","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We report on the performance of a semiconductor saturable absorber mirror mode-locked Nd: GdVO4 laser in-band diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power with the pulse width of 16 ps, repetition rate of 85 MHz, optical efficiency of ∼ 50% and slope efficiency of 68%.