GaAs (311)B衬底上的高应变(/spl λ /=1.12 /spl mu/m) GaInAs/GaAs VCSEL具有稳定的极化特性

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882264

N. Nishiyama, M. Arai, S. Shinada, T. Miyamoto, F. Koyama, K. Iga

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引用次数: 1

摘要

我们展示了在GaAs (311)B衬底上生长的1.12 /spl mu/m高应变GaInAs/GaAs QWs VCSELs。In含量分别为33%和2.3%。阈值电流为0.9 mA。该vcsel具有较高的极化稳定性，OPSR可达25 dB，在高速工作条件下可保持较高的OPSR。我们正在将波长延长到1.3 /spl mu/m，并将该器件应用于基于硅光纤的高速局域网。

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A highly strained (/spl lambda/=1.12 /spl mu/m) GaInAs/GaAs VCSEL on GaAs (311)B substrate exhibiting stable polarization

We have demonstrated a 1.12 /spl mu/m highly strained GaInAs/GaAs QWs VCSELs grown on a GaAs (311)B substrate. Those wells have the In content of 33% and 2.3% strain. The threshold current is 0.9 mA. These VCSELs also show large polarization stability with OPSR of 25 dB, we can expect these VCSELs can maintain a large OPSR under high-speed operation. We are elongating the wavelength toward 1.3 /spl mu/m and apply the device to high-speed silica-fiber based LANs.

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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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