门指对45纳米射频开关双栅MOSFET的影响

2011 International Conference on Communication Systems and Network Technologies Pub Date : 2011-06-03 DOI:10.1109/CSNT.2011.101

V. Srivastava, G. Singh, K. S. Yadav

{"title":"门指对45纳米射频开关双栅MOSFET的影响","authors":"V. Srivastava, G. Singh, K. S. Yadav","doi":"10.1109/CSNT.2011.101","DOIUrl":null,"url":null,"abstract":"In this paper, an independently controlled symmetrical double-gate MOSFET is analyzed, which is used for the double-pole four-throw RF CMOS switch design. This analysis emphasizes on the study of the effect of number of gate finger and their layouts for the double-gate MOSFET at 45-nm technology. This is in terms of supply voltage, gate voltage, drain current, and voltage gain. Higher drain current can be easily achieved by using higher number of gate finger which are also analyzed.","PeriodicalId":294850,"journal":{"name":"2011 International Conference on Communication Systems and Network Technologies","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Gate Finger on Double-Gate MOSFET for RF Switch at 45-nm Technology\",\"authors\":\"V. Srivastava, G. Singh, K. S. Yadav\",\"doi\":\"10.1109/CSNT.2011.101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, an independently controlled symmetrical double-gate MOSFET is analyzed, which is used for the double-pole four-throw RF CMOS switch design. This analysis emphasizes on the study of the effect of number of gate finger and their layouts for the double-gate MOSFET at 45-nm technology. This is in terms of supply voltage, gate voltage, drain current, and voltage gain. Higher drain current can be easily achieved by using higher number of gate finger which are also analyzed.\",\"PeriodicalId\":294850,\"journal\":{\"name\":\"2011 International Conference on Communication Systems and Network Technologies\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Conference on Communication Systems and Network Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSNT.2011.101\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Communication Systems and Network Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSNT.2011.101","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文分析了一种独立控制的对称双栅MOSFET，用于双极四掷射频CMOS开关设计。本文着重研究了45纳米双栅MOSFET的栅极指数及其布局的影响。这是指电源电压、栅极电压、漏极电流和电压增益。采用较高的栅极指数可以实现较高的漏极电流，并对其进行了分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Effect of Gate Finger on Double-Gate MOSFET for RF Switch at 45-nm Technology

In this paper, an independently controlled symmetrical double-gate MOSFET is analyzed, which is used for the double-pole four-throw RF CMOS switch design. This analysis emphasizes on the study of the effect of number of gate finger and their layouts for the double-gate MOSFET at 45-nm technology. This is in terms of supply voltage, gate voltage, drain current, and voltage gain. Higher drain current can be easily achieved by using higher number of gate finger which are also analyzed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2011 International Conference on Communication Systems and Network Technologies

自引率

0.00%

发文量