{"title":"应变硅材料中0.1 um n沟道MOSFET全频带蒙特卡罗器件模拟","authors":"S. Keith, F. M. Bufler, B. Meinerzhagen","doi":"10.1109/ESSDERC.1997.194400","DOIUrl":null,"url":null,"abstract":"Full band Monte Carlo device simulation is applied in this paper for a projection of the performance advantages of NMOS transistors with surface channels in strained Si in comparison to conventional Si NMOSTs. For strained Si grown on a Si0 7Ge0 3 buffer an advantage of 30 % in terms of maximum Ion is found.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Full Band Monte-Carlo Device Simulation of an 0.1 um N-Channel MOSFET in Strained Silicon Material\",\"authors\":\"S. Keith, F. M. Bufler, B. Meinerzhagen\",\"doi\":\"10.1109/ESSDERC.1997.194400\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Full band Monte Carlo device simulation is applied in this paper for a projection of the performance advantages of NMOS transistors with surface channels in strained Si in comparison to conventional Si NMOSTs. For strained Si grown on a Si0 7Ge0 3 buffer an advantage of 30 % in terms of maximum Ion is found.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194400\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194400","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Full Band Monte-Carlo Device Simulation of an 0.1 um N-Channel MOSFET in Strained Silicon Material
Full band Monte Carlo device simulation is applied in this paper for a projection of the performance advantages of NMOS transistors with surface channels in strained Si in comparison to conventional Si NMOSTs. For strained Si grown on a Si0 7Ge0 3 buffer an advantage of 30 % in terms of maximum Ion is found.
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