{"title":"用于无线应用的CMOS RF带通滤波器的宽调谐范围","authors":"Zhiqiang Gao, Mingyan Yu, Y. Ye, Jianguo Ma","doi":"10.1109/EDSSC.2005.1635204","DOIUrl":null,"url":null,"abstract":"A 2ndorder RF bandpass filter with high-Q active inductor using low-voltage is presented. In the filter, a design technique for a tunable high-Q CMOS active inductor operating in the wide RF-band is described. Simulated performance is presented showing that the center frequency of filter using a 0.25-um CMOS process can be operated at the 1.60G∼2.45GHz frequency band under a 1.8V power supply and quality factor is adjusted from 30∼200 when fc≈2.45GHz.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Wide Tuning Range of A CMOS RF Bandpass Filter For Wireless Applications\",\"authors\":\"Zhiqiang Gao, Mingyan Yu, Y. Ye, Jianguo Ma\",\"doi\":\"10.1109/EDSSC.2005.1635204\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 2ndorder RF bandpass filter with high-Q active inductor using low-voltage is presented. In the filter, a design technique for a tunable high-Q CMOS active inductor operating in the wide RF-band is described. Simulated performance is presented showing that the center frequency of filter using a 0.25-um CMOS process can be operated at the 1.60G∼2.45GHz frequency band under a 1.8V power supply and quality factor is adjusted from 30∼200 when fc≈2.45GHz.\",\"PeriodicalId\":429314,\"journal\":{\"name\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2005.1635204\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635204","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
摘要
提出了一种低压高q有源电感的二阶射频带通滤波器。在滤波器中,描述了一种可调谐高q CMOS有源电感器的设计技术,该电感器工作在宽射频波段。仿真结果表明,在1.8V电源下,采用0.25 um CMOS工艺的滤波器的中心频率可工作在1.60G ~ 2.45GHz频段,当fc≈2.45GHz时,质量因子可从30 ~ 200调整。
Wide Tuning Range of A CMOS RF Bandpass Filter For Wireless Applications
A 2ndorder RF bandpass filter with high-Q active inductor using low-voltage is presented. In the filter, a design technique for a tunable high-Q CMOS active inductor operating in the wide RF-band is described. Simulated performance is presented showing that the center frequency of filter using a 0.25-um CMOS process can be operated at the 1.60G∼2.45GHz frequency band under a 1.8V power supply and quality factor is adjusted from 30∼200 when fc≈2.45GHz.