基于对立和声搜索算法的CMOS模拟放大电路尺寸优化

K. B. Maji, Harshita Jaiswal, R. Kar, D. Mandal, S. Ghoshal
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引用次数: 2

摘要

利用基于对差的和声搜索技术(OHS)对互补金属氧化物半导体(CMOS)差分放大电路进行了优化设计。采用原始的和声搜索算法作为和声搜索算法的核心,实现了算法的近全局收敛。和声记忆(HM)中的每个解都是基于内存考虑规则、音调调整规则和重新初始化过程生成的,在多维搜索空间中给出误差适应度最小的最优结果。在基本HS算法中引入不同的控制参数,实现了对搜索空间的探索与利用的平衡。本文提出的基于OHS的CMOS模拟放大电路设计,克服了遗传算法(GA)、粒子群算法(PSO)和差分进化算法(DE)所固有的过早收敛和停滞的缺点。为了验证基于OHS技术的优越性,利用优化后的参数进行了SPICE仿真。优化设计的放大电路的结果证实了基于OHS的优化算法在收敛速度、设计准则和设计目标方面优于DE、和谐搜索(HS)、人工蜂群(ABC)和粒子群算法(PSO)。仿真结果表明,基于OHS设计的放大电路不仅提供了最小的MOS晶体管面积,而且提高了增益和功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Opposition Harmony Search algorithm based optimal sizing of CMOS analog amplifier circuit
Optimal design of Complementary Metal Oxide Semiconductor (CMOS) differential amplifier circuit using Opposition based Harmony Search technique (OHS) is reported in this work. The original Harmony Search (HS) algorithm is chosen as heart of the OHS for near-global convergence. Each solution in Harmony Memory (HM) is generated on the basis of memory consideration rule, a pitch adjustment rule and a reinitialization process which gives the optimum result corresponding to the least error fitness in multidimensional search space. Incorporation of different control parameters in basic HS algorithm results in balancing of exploration and exploitation of search space. The proposed OHS based CMOS analog amplifier circuit design has alleviated from inherent drawbacks of premature convergence and stagnation, unlike Genetic Algorithm (GA), Particle Swarm Optimization (PSO) and Differential Evolution (DE). To confirm the superiority of the OHS based technique, SPICE simulation is also carried out by using the optimized parameters achieved by employing OHS. Results presented for the optimally designed amplifier circuit confirm the superiority of the proposed OHS based technique over DE, harmony search (HS), artificial bee colony (ABC) and PSO in terms of convergence speed, design criteria and design objectives. Simulation results confirm that OHS based designed amplifier circuit not only provides the least MOS transistor area, but it also provides improved gain and dissipates least power than the reported works.
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