J. Martín, S. Erickson, G. Nolas, P. Alboni, T. Tritt
{"title":"ba填充Si-Ge合金I型半导体包合物的热电性能","authors":"J. Martín, S. Erickson, G. Nolas, P. Alboni, T. Tritt","doi":"10.1109/ICT.2005.1519928","DOIUrl":null,"url":null,"abstract":"We report the synthesis of the Si-Ge alloy type I clathrate Ba/sub 8/Ga/sub 16/Si/sub x/Ge/sub 30-x/ including a systematic investigation of the electrical properties by varying the Si-to-Ge ratio while a constant Ga-to-group IV element ratio is maintained. These Si-Ge type I clathrate samples demonstrate transport properties in direct contrast to those expected in a typical rigid band semiconducting material. The increasing Si substitution correlates to an increase in |S| even as the resistivity decreases and the carrier concentration increases, suggesting a modified band structure as compared to Ba/sub 8/Ga/sub 16/Ge/sub 30/. The structural, chemical, and electrical transport properties of Ba/sub 8/Ga/sub 16/Si/sub x/Ge/sub 30-x/ are reported in comparison to Ba/sub 8/Ga/sub 16/Ge/sub 30/ and Sr/sub 8/Ga/sub 16/Si/sub x/Ge/sub 30-x/.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Thermoelectric properties of Ba-filled Si-Ge alloy type I semiconducting clathrates\",\"authors\":\"J. Martín, S. Erickson, G. Nolas, P. Alboni, T. Tritt\",\"doi\":\"10.1109/ICT.2005.1519928\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the synthesis of the Si-Ge alloy type I clathrate Ba/sub 8/Ga/sub 16/Si/sub x/Ge/sub 30-x/ including a systematic investigation of the electrical properties by varying the Si-to-Ge ratio while a constant Ga-to-group IV element ratio is maintained. These Si-Ge type I clathrate samples demonstrate transport properties in direct contrast to those expected in a typical rigid band semiconducting material. The increasing Si substitution correlates to an increase in |S| even as the resistivity decreases and the carrier concentration increases, suggesting a modified band structure as compared to Ba/sub 8/Ga/sub 16/Ge/sub 30/. The structural, chemical, and electrical transport properties of Ba/sub 8/Ga/sub 16/Si/sub x/Ge/sub 30-x/ are reported in comparison to Ba/sub 8/Ga/sub 16/Ge/sub 30/ and Sr/sub 8/Ga/sub 16/Si/sub x/Ge/sub 30-x/.\",\"PeriodicalId\":422400,\"journal\":{\"name\":\"ICT 2005. 24th International Conference on Thermoelectrics, 2005.\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICT 2005. 24th International Conference on Thermoelectrics, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.2005.1519928\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.2005.1519928","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermoelectric properties of Ba-filled Si-Ge alloy type I semiconducting clathrates
We report the synthesis of the Si-Ge alloy type I clathrate Ba/sub 8/Ga/sub 16/Si/sub x/Ge/sub 30-x/ including a systematic investigation of the electrical properties by varying the Si-to-Ge ratio while a constant Ga-to-group IV element ratio is maintained. These Si-Ge type I clathrate samples demonstrate transport properties in direct contrast to those expected in a typical rigid band semiconducting material. The increasing Si substitution correlates to an increase in |S| even as the resistivity decreases and the carrier concentration increases, suggesting a modified band structure as compared to Ba/sub 8/Ga/sub 16/Ge/sub 30/. The structural, chemical, and electrical transport properties of Ba/sub 8/Ga/sub 16/Si/sub x/Ge/sub 30-x/ are reported in comparison to Ba/sub 8/Ga/sub 16/Ge/sub 30/ and Sr/sub 8/Ga/sub 16/Si/sub x/Ge/sub 30-x/.