双轴高灵敏度±5g多晶硅差分电容加速度计

Zakriya Mohammed, G. Dushaq, A. Chatterjee, M. Rasras
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引用次数: 5

摘要

本文演示了一种两轴电容式加速度计的设计与仿真。该设计采用简单的梳状结构来检测电容变化,最小间隙为0.9 μm。通过优化设计和抗间隙间距,该器件可以在证明质量位移的情况下产生高电容变化。初步仿真结果表明,位移灵敏度为0.02μm/g (g=9.8 m/s2),差分电容灵敏度(比例因子)为68 fF/g。在其范围(±5g)和尺寸(2×2mm2)的器件中,获得的灵敏度是最好的。该设备由GlobalFoundries-Singapore制造。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bi-axial highly sensitive ±5g polysilicon based differential capacitive accelerometer
This paper demonstrates the design and simulation of a 2-axis capacitive accelerometer. The design utilizes a simple comb structure to detect capacitance change with a minimum gap spacing of 0.9 μm. By optimizing the design and anti-gap spacing, the device is designed to yield high capacitance change with the proof mass displacement. Initial simulation results show a displacement sensitivity of 0.02μm/g (g=9.8 m/s2) and a differential capacitance sensitivity (scale factor) of 68 fF/g. The sensitivity achieved is best among the devices of its range (± 5g) and dimensions (2×2mm2). This device is being fabricated by GlobalFoundries-Singapore.
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