5G系统用45nm PDSOI带5A CDM ESD保护的38GHz SPDT行波开关

2023 IEEE Radio and Wireless Symposium (RWS) Pub Date : 2023-01-22 DOI:10.1109/RWS55624.2023.10046341

Mengfu Di, Weiquan Hao, Xunyu Li, Zijin Pan, Runyu Miao, Albert Z. Wang

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引用次数: 0

摘要

本文介绍了一种38GHz行波单极双通(SPDT)射频开关的协同设计和分析，该开关具有强大的ESD保护，可用于45nm PDSOI技术的毫米波频段5G系统。衬底耦合被埋氧化物(BOX)层最小化。原始开关在38GHz时的插入损耗(IL)为−1.4dB，隔离度(Iso)为~59dB。实现了稳健带电器件模型(CDM) ESD保护的设计目标，测量结果达到了~5A。人体模型(HBM)也实现了~2KV的静电放电。在38GHz时，防静电SPDT实现了−3.49dB的IL和−49dB的Iso。设计分析表明，ESD保护对SPDT性能的影响很大，通过精心的协同设计，可以将其最小化，在38GHz时将插入损耗提高了约0.8dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 38GHz SPDT Traveling Wave Switch with 5A CDM ESD Protection in 45nm PDSOI for 5G System

This paper presents co-design and analysis of a 38GHz traveling wave single-pole double-through (SPDT) RF switch with robust ESD protection implemented in 45nm PDSOI technology 5G systems in millimeter-wave bands. Substrate coupling is minimized by a buried oxide (BOX) layer. The original switches exhibit insertion loss (IL) of −1.4dB and isolation (Iso) of ~59dB at 38GHz. The design goal of robust charged device model (CDM) ESD protection was realized, achieving ~5A in measurement. Human body model (HBM) ESD of ~2KV was also achieved. The ESD-protected SPDT achieves IL of −3.49dB and Iso of −49dB at 38GHz. Design analysis reveals significant impact of ESD protection on SPDT performance, which was minimized through careful co-design effort, improving insertion loss by ~0.8dB at 38GHz.

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2023 IEEE Radio and Wireless Symposium (RWS)

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