{"title":"互扩散GaAs/AlGaAs量子阱中Al谱的透射电镜测量","authors":"J. Zou, D. Cai, D. Cockayne, S. Yuan, C. Jagadish","doi":"10.1109/COMMAD.1998.791662","DOIUrl":null,"url":null,"abstract":"In this paper, we demonstrate the application of thickness fringe imaging technique to determine the quantum well profile in an interdiffused GaAsAl/GaAs quantum well heterostructure.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells\",\"authors\":\"J. Zou, D. Cai, D. Cockayne, S. Yuan, C. Jagadish\",\"doi\":\"10.1109/COMMAD.1998.791662\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we demonstrate the application of thickness fringe imaging technique to determine the quantum well profile in an interdiffused GaAsAl/GaAs quantum well heterostructure.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791662\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells
In this paper, we demonstrate the application of thickness fringe imaging technique to determine the quantum well profile in an interdiffused GaAsAl/GaAs quantum well heterostructure.