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互扩散GaAs/AlGaAs量子阱中Al谱的透射电镜测量

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791662
J. Zou, D. Cai, D. Cockayne, S. Yuan, C. Jagadish
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引用次数: 0

摘要

在本文中，我们展示了厚度条纹成像技术在确定互扩散GaAsAl/GaAs量子阱异质结构中量子阱剖面的应用。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells
In this paper, we demonstrate the application of thickness fringe imaging technique to determine the quantum well profile in an interdiffused GaAsAl/GaAs quantum well heterostructure.
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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)
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