G. McMillian, W. Hallidy, M. Hood, G. Phan, Tan Chu, Kim Lau, M. Lawrence, J. Phan, A. Lee, C. Musgrove, M. Sanders, A. Morgan, G. Schmidt, G. Zreet
{"title":"一种500mhz GaAs数字射频存储器调制器集成电路","authors":"G. McMillian, W. Hallidy, M. Hood, G. Phan, Tan Chu, Kim Lau, M. Lawrence, J. Phan, A. Lee, C. Musgrove, M. Sanders, A. Morgan, G. Schmidt, G. Zreet","doi":"10.1109/GAAS.1996.567734","DOIUrl":null,"url":null,"abstract":"A single chip digital radio frequency memory (DRFM) modulator provides time delay, Doppler shifting, and phase/amplitude modulation of RF signals. The digital IC has been implemented in Vitesse Semiconductor's H-GaAs III technology for operation up to 500 MHz, and was designed with COMPASS Design Automation's CAE tools and SPEC's standard cell libraries.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 500 MHz GaAs digital RF memory modulator IC\",\"authors\":\"G. McMillian, W. Hallidy, M. Hood, G. Phan, Tan Chu, Kim Lau, M. Lawrence, J. Phan, A. Lee, C. Musgrove, M. Sanders, A. Morgan, G. Schmidt, G. Zreet\",\"doi\":\"10.1109/GAAS.1996.567734\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A single chip digital radio frequency memory (DRFM) modulator provides time delay, Doppler shifting, and phase/amplitude modulation of RF signals. The digital IC has been implemented in Vitesse Semiconductor's H-GaAs III technology for operation up to 500 MHz, and was designed with COMPASS Design Automation's CAE tools and SPEC's standard cell libraries.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567734\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567734","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A single chip digital radio frequency memory (DRFM) modulator provides time delay, Doppler shifting, and phase/amplitude modulation of RF signals. The digital IC has been implemented in Vitesse Semiconductor's H-GaAs III technology for operation up to 500 MHz, and was designed with COMPASS Design Automation's CAE tools and SPEC's standard cell libraries.