0.18 um CMOS口袋植入参数的研究

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194406

J. Schmitz, Y. Ponomarev, A. Montree, P. Woerlee

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引用次数: 1

摘要

提出了用于0.18 μm CMOS的PMOS和NMOS晶体管。详细研究了口袋植入物的剂量和角度，表明这些植入条件不影响长通道S和VT，也不影响衬底电流。当评估阈值电压滚降和亚阈值摆动时，发现了一个明显的优化，从而在离子/ off比方面获得了最佳性能。

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Study of pocket implant parameters for 0,18 um CMOS

PMOS and NMOS transistors for the 0.18 μm CMOS generation with pocket punch-through stoppers are presented. A detailed study of the dose and angle of the pocket implants is presented, showing that these implant conditions do not affect the long-channel S and VT, nor the substrate current. A clear optimum is found when threshold voltage rolloff and subthreshold swing are evaluated, leading to the best performance in terms of Ion/Ioff ratio.

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27th European Solid-State Device Research Conference

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