{"title":"用于WSN/IoT设备电源管理的简化过温保护电路结构","authors":"J. Hora, Xi Zhu, E. Dutkiewicz","doi":"10.1109/ICST46873.2019.9047726","DOIUrl":null,"url":null,"abstract":"This paper presents a modified structure of the over-temperature protective circuit integrated into the power management converter design for wireless sensor node devices. The design is focused on realizing a simplified circuit structure that is compatible with standard CMOS technology structure and evaluating the over-temperature threshold to assure needed accuracy. HSPICE simulation using Monte Carlo Analysis for the bandgap voltage reference is used to get a better estimation, process variation, and reliability. The target design temperature threshold is obtained at approximately 150 °C, which is the standard chip testing value at worst temperature consideration. Post-layout simulation of the proposed circuit design structure is carried out using 65nm 1P9M CMOS 1.2V/2.5V logic CMOS technology. And it is co-integrated in the power management circuit design for the system-on-chip wireless sensor node device.","PeriodicalId":344937,"journal":{"name":"2019 13th International Conference on Sensing Technology (ICST)","volume":"08 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Simplified Over- Temperature Protection Circuit Structure for WSN/IoT Device Power Management\",\"authors\":\"J. Hora, Xi Zhu, E. Dutkiewicz\",\"doi\":\"10.1109/ICST46873.2019.9047726\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a modified structure of the over-temperature protective circuit integrated into the power management converter design for wireless sensor node devices. The design is focused on realizing a simplified circuit structure that is compatible with standard CMOS technology structure and evaluating the over-temperature threshold to assure needed accuracy. HSPICE simulation using Monte Carlo Analysis for the bandgap voltage reference is used to get a better estimation, process variation, and reliability. The target design temperature threshold is obtained at approximately 150 °C, which is the standard chip testing value at worst temperature consideration. Post-layout simulation of the proposed circuit design structure is carried out using 65nm 1P9M CMOS 1.2V/2.5V logic CMOS technology. And it is co-integrated in the power management circuit design for the system-on-chip wireless sensor node device.\",\"PeriodicalId\":344937,\"journal\":{\"name\":\"2019 13th International Conference on Sensing Technology (ICST)\",\"volume\":\"08 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 13th International Conference on Sensing Technology (ICST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICST46873.2019.9047726\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 13th International Conference on Sensing Technology (ICST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICST46873.2019.9047726","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simplified Over- Temperature Protection Circuit Structure for WSN/IoT Device Power Management
This paper presents a modified structure of the over-temperature protective circuit integrated into the power management converter design for wireless sensor node devices. The design is focused on realizing a simplified circuit structure that is compatible with standard CMOS technology structure and evaluating the over-temperature threshold to assure needed accuracy. HSPICE simulation using Monte Carlo Analysis for the bandgap voltage reference is used to get a better estimation, process variation, and reliability. The target design temperature threshold is obtained at approximately 150 °C, which is the standard chip testing value at worst temperature consideration. Post-layout simulation of the proposed circuit design structure is carried out using 65nm 1P9M CMOS 1.2V/2.5V logic CMOS technology. And it is co-integrated in the power management circuit design for the system-on-chip wireless sensor node device.