快速锁定频率合成器PFD架构的设计、分析与比较

Avinash Sharma, Gopal Sharma, Arun kishor Johar, T. B. Kumar, D. Boolchandani
{"title":"快速锁定频率合成器PFD架构的设计、分析与比较","authors":"Avinash Sharma, Gopal Sharma, Arun kishor Johar, T. B. Kumar, D. Boolchandani","doi":"10.1109/WITCONECE48374.2019.9092929","DOIUrl":null,"url":null,"abstract":"In this work design and analysis of Two Phase Frequency Detector (PFD) architectures have been carried out in SCL 180 nm CMOS technology. Performance of these PFD's are evaluated in terms of delay and power consumption. Supply voltage of 1.8 V is used to optimize the performance. Among the two designed PFD architectures, first PFD is designed using Multithreshold Complementary Oxide Semiconductor (MTCMOS) power gating technique and second is designed by utilizing feed forward reset PFD using external delay cell. First architecture has the advantage of reduced power consumption whereas second architecture is suitable for the design of high frequency and low jitter frequency synthesizers, as it offers very small dead zone. Simulation results display that feed forward PFD is free from dead zone but at the cost of increased complexity in terms of area and power consumption.","PeriodicalId":350816,"journal":{"name":"2019 Women Institute of Technology Conference on Electrical and Computer Engineering (WITCON ECE)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design, Analysis and Comparison of PFD Architectures for Fast Locking Frequency Synthesizer\",\"authors\":\"Avinash Sharma, Gopal Sharma, Arun kishor Johar, T. B. Kumar, D. Boolchandani\",\"doi\":\"10.1109/WITCONECE48374.2019.9092929\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work design and analysis of Two Phase Frequency Detector (PFD) architectures have been carried out in SCL 180 nm CMOS technology. Performance of these PFD's are evaluated in terms of delay and power consumption. Supply voltage of 1.8 V is used to optimize the performance. Among the two designed PFD architectures, first PFD is designed using Multithreshold Complementary Oxide Semiconductor (MTCMOS) power gating technique and second is designed by utilizing feed forward reset PFD using external delay cell. First architecture has the advantage of reduced power consumption whereas second architecture is suitable for the design of high frequency and low jitter frequency synthesizers, as it offers very small dead zone. Simulation results display that feed forward PFD is free from dead zone but at the cost of increased complexity in terms of area and power consumption.\",\"PeriodicalId\":350816,\"journal\":{\"name\":\"2019 Women Institute of Technology Conference on Electrical and Computer Engineering (WITCON ECE)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Women Institute of Technology Conference on Electrical and Computer Engineering (WITCON ECE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WITCONECE48374.2019.9092929\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Women Institute of Technology Conference on Electrical and Computer Engineering (WITCON ECE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WITCONECE48374.2019.9092929","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文采用SCL 180 nm CMOS技术,对两相频率检测器(PFD)的结构进行了设计和分析。这些PFD的性能是根据延迟和功耗来评估的。电源电压选用1.8 V以优化性能。在设计的两种PFD架构中,第一种PFD采用多阈值互补氧化物半导体(MTCMOS)功率门控技术设计,第二种PFD采用采用外部延迟单元的前馈复位设计。第一种架构具有降低功耗的优点,而第二种架构适合设计高频和低抖动频率合成器,因为它提供了非常小的死区。仿真结果表明,前馈PFD不存在死区,但在面积和功耗方面增加了复杂度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design, Analysis and Comparison of PFD Architectures for Fast Locking Frequency Synthesizer
In this work design and analysis of Two Phase Frequency Detector (PFD) architectures have been carried out in SCL 180 nm CMOS technology. Performance of these PFD's are evaluated in terms of delay and power consumption. Supply voltage of 1.8 V is used to optimize the performance. Among the two designed PFD architectures, first PFD is designed using Multithreshold Complementary Oxide Semiconductor (MTCMOS) power gating technique and second is designed by utilizing feed forward reset PFD using external delay cell. First architecture has the advantage of reduced power consumption whereas second architecture is suitable for the design of high frequency and low jitter frequency synthesizers, as it offers very small dead zone. Simulation results display that feed forward PFD is free from dead zone but at the cost of increased complexity in terms of area and power consumption.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信