射频MEMS开关与半导体开关的比较

P. Grant, M. Denhoff, R. Mansour
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引用次数: 115

摘要

本文介绍了射频开关的基本原理,并对半导体开关和射频MEMS开关进行了比较。通过定义一个与关断状态电容和导通状态电阻有关的功值,介绍了比较的基础。提出了一个简单的传输线模型来说明开关断态电容对开关隔离和工作频率范围的影响。本文给出的优点分析图表明,与MESFET和p-i-n二极管开关相比,RF MEMS开关具有优越的插入损耗和隔离性能。本文还讨论了在选择合适的射频开关时,除了插入损耗和隔离之外的其他几个设计考虑因素。讨论了射频MEMS开关在卫星和无线应用中的潜在用途。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Comparison between RF MEMS Switches and Semiconductor Switches
This paper addresses the fundamentals of RF switches providing a comparison between semiconductor and RF MEMS switches. The basis of comparison is introduced by defining a figure of merit that is a function of the off-state capacitance and the on-state resistance. A simple transmission line model is presented to illustrate the impact of the switch off-state capacitance on the switch isolation and frequency range of operation. The figure of merit analysis given in this paper demonstrates that RF MEMS switches have superior insertion loss and isolation performance in comparison to MESFET and p-i-n diode switches. The paper also addresses several other design considerations beside insertion loss and isolation for selecting the right RF switch. A discussion is given on the potential use of RF MEMS switches in satellite and wireless applications.
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