采用0.5µm GaN-on-SiC HEMT技术的宽带高功率三倍频器

Min-Li Chou, Yi-Qi Chiang, H. Chiu, F. Huang
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引用次数: 2

摘要

在0.5 μm GaN-on-SiC HEMT MMIC工艺中实现了x波段信号生成的三倍频器。该设计利用输入输出匹配网络作为带阻滤波器,具有带宽和谐波抑制的特点。在输入功率为22 dBm时,该三倍频器的转换损耗为4.5 dB,在15 V直流电源下的转换效率为1.0 ~ 1.8%。输出3db带宽约为1.8 GHz,范围为9.9 ~ 11.7 GHz,输入功率为26 dBm时,饱和输出功率可达19.8 dBm。基频和二次谐波的抑制效果分别优于27.8 dBc和15 dBc。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A broadband and high power frequency tripler using 0.5 µm GaN-on-SiC HEMT technology
A frequency tripler for X-band signal generation was implemented in 0.5 μm GaN-on-SiC HEMT MMIC process. The design with input and output matching network serve as band stop filters were utilized with the characteristic of bandwidth and harmonic suppression. The frequency tripler exhibit a measured conversion loss of 4.5 dB under an input power of 22 dBm with conversion efficiency of 1.0 to 1.8 % from a 15 V dc supply. The output 3-dB bandwidth is around 1.8 GHz ranging from 9.9 to 11.7 GHz, and the saturation output power can be operated to 19.8 dBm with an input power of 26 dBm. The fundamental- and second-harmonic suppression are better than 27.8 dBc and 15 dBc, respectively.
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