{"title":"基于GaAs肖特基二极管的850GHz单片接收前端设计与优化","authors":"Shuoxing Li, Meng Zhang, Zegang Huang, Lu Tang","doi":"10.1109/ICET51757.2021.9451030","DOIUrl":null,"url":null,"abstract":"The paper presents a low noise efficiency circuit design of the 850GHz monolithic receiving front-end based on GaAs Schottky diodes and describes specific working mechanism and modeling approach. In this circuit, the local oscillator multiplier chain uses a parallel diode pair and directly frequency multiplier with nine times for reducing parasitic parameters. In order to obtain accurate model results quickly, the electromagnetic model of the planar Schottky diode, mixer and frequency multiplier are designed separately based on physical characteristics. Finally, the receiving front-end accurate electromagnetic model is built and simulated by iterative optimization, which shows a good noise performance that $4450\\mathrm{K} \\sim 4700\\mathrm{K}$ and conversion gain 15dB $\\sim 20$ dB within the frequency band of 830GHz $\\sim 870$ GHz.","PeriodicalId":316980,"journal":{"name":"2021 IEEE 4th International Conference on Electronics Technology (ICET)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Optimization of the 850GHz Monolithic Receiving Front-end Based on GaAs Schottky Diodes\",\"authors\":\"Shuoxing Li, Meng Zhang, Zegang Huang, Lu Tang\",\"doi\":\"10.1109/ICET51757.2021.9451030\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents a low noise efficiency circuit design of the 850GHz monolithic receiving front-end based on GaAs Schottky diodes and describes specific working mechanism and modeling approach. In this circuit, the local oscillator multiplier chain uses a parallel diode pair and directly frequency multiplier with nine times for reducing parasitic parameters. In order to obtain accurate model results quickly, the electromagnetic model of the planar Schottky diode, mixer and frequency multiplier are designed separately based on physical characteristics. Finally, the receiving front-end accurate electromagnetic model is built and simulated by iterative optimization, which shows a good noise performance that $4450\\\\mathrm{K} \\\\sim 4700\\\\mathrm{K}$ and conversion gain 15dB $\\\\sim 20$ dB within the frequency band of 830GHz $\\\\sim 870$ GHz.\",\"PeriodicalId\":316980,\"journal\":{\"name\":\"2021 IEEE 4th International Conference on Electronics Technology (ICET)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 4th International Conference on Electronics Technology (ICET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICET51757.2021.9451030\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 4th International Conference on Electronics Technology (ICET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICET51757.2021.9451030","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and Optimization of the 850GHz Monolithic Receiving Front-end Based on GaAs Schottky Diodes
The paper presents a low noise efficiency circuit design of the 850GHz monolithic receiving front-end based on GaAs Schottky diodes and describes specific working mechanism and modeling approach. In this circuit, the local oscillator multiplier chain uses a parallel diode pair and directly frequency multiplier with nine times for reducing parasitic parameters. In order to obtain accurate model results quickly, the electromagnetic model of the planar Schottky diode, mixer and frequency multiplier are designed separately based on physical characteristics. Finally, the receiving front-end accurate electromagnetic model is built and simulated by iterative optimization, which shows a good noise performance that $4450\mathrm{K} \sim 4700\mathrm{K}$ and conversion gain 15dB $\sim 20$ dB within the frequency band of 830GHz $\sim 870$ GHz.
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