辐射暴露下SAR ADC性能分析

Atakan Türker, Kemal Ozanoglu, Engin Afacan, Günhan Dündar
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引用次数: 0

摘要

本文研究了辐射对空间应用的逐次逼近寄存器(SAR)模数转换器(adc)的影响。总电离剂量(TID)和单事件瞬态(SET)被考虑用于两种类型的SAR adc:基于分裂电容阵列的数模转换器(DAC)和基于C-2C梯形的DAC。TID的影响被建模为比较器的偏移量变化,而SET的影响是通过在dac的不同节点上施加瞬时电流来模拟的。仿真结果显示,TID会导致码缺失,而SET则会根据SET事件发生的时间和位置导致输出码位翻转。此外,我们还观察到,与基于C-2C阶梯的DAC相比,带有分裂电容阵列DAC的SAR ADC的SET性能更好。所进行的分析为实现抗辐射SAR adc提供了有价值的电路设计见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of SAR ADC Performance Under Radiation Exposure
This paper investigates the radiation effects on Successive Approximation Register (SAR) Analog-to-Digital Converters (ADCs) for space applications. Total Ionizing Dose (TID) and Single Event Transient (SET) are considered for two types of SAR ADCs: split capacitor array Digital-to-Analog Converter (DAC) based and C-2C ladder-based DAC based. The effect of TID is modeled as the offset change in the comparator, while the SET effect is simulated through applying instant currents to different nodes on the DACs. According to the simulation results, TID causes missing codes, whereas SET may cause bit flips in the output code depending on the incident time and the location of the SET event. Also, it is observed that the SET performance of the SAR ADC with split capacitor array DAC is better with respect to the C-2C ladder-based DAC. The performed analysis provides valuable circuit design insights to achieve radiation-hardened SAR ADCs.
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