{"title":"长波长激光用带中间层的GaInNAs QW","authors":"F. Maskuriy, M. Alias, S. Mitani, A. A. Manaf","doi":"10.1109/ISIEA.2011.6108787","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T0 of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.","PeriodicalId":110449,"journal":{"name":"2011 IEEE Symposium on Industrial Electronics and Applications","volume":"15 17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaInNAs QW with GaNAs intermediate layer for long wavelength laser\",\"authors\":\"F. Maskuriy, M. Alias, S. Mitani, A. A. Manaf\",\"doi\":\"10.1109/ISIEA.2011.6108787\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T0 of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.\",\"PeriodicalId\":110449,\"journal\":{\"name\":\"2011 IEEE Symposium on Industrial Electronics and Applications\",\"volume\":\"15 17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Symposium on Industrial Electronics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISIEA.2011.6108787\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Symposium on Industrial Electronics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISIEA.2011.6108787","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaInNAs QW with GaNAs intermediate layer for long wavelength laser
In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T0 of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.
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