用水平集方法对CBRAM器件进行高级仿真

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI:10.1109/SISPAD.2014.6931556

P. Dorion, O. Cueto, M. Reyboz, J. Barbe, A. Grigoriu, Y. Maday

{"title":"用水平集方法对CBRAM器件进行高级仿真","authors":"P. Dorion, O. Cueto, M. Reyboz, J. Barbe, A. Grigoriu, Y. Maday","doi":"10.1109/SISPAD.2014.6931556","DOIUrl":null,"url":null,"abstract":"A TCAD model for Chalcogenide based CBRAM is presented. This model starts from an existing model and uses an advanced level set method to follow the growth of the filament in the electrolyte. We couple the level set method with equations which model the cations migration and the electric field in the electrolyte and in the filament. We take into account silver clusters in the electrolyte in order to study their influence on switching time.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"EM-15 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advanced simulation of CBRAM devices with the level set method\",\"authors\":\"P. Dorion, O. Cueto, M. Reyboz, J. Barbe, A. Grigoriu, Y. Maday\",\"doi\":\"10.1109/SISPAD.2014.6931556\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A TCAD model for Chalcogenide based CBRAM is presented. This model starts from an existing model and uses an advanced level set method to follow the growth of the filament in the electrolyte. We couple the level set method with equations which model the cations migration and the electric field in the electrolyte and in the filament. We take into account silver clusters in the electrolyte in order to study their influence on switching time.\",\"PeriodicalId\":101858,\"journal\":{\"name\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"EM-15 3\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2014.6931556\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931556","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种基于硫族化合物的CBRAM的TCAD模型。该模型从现有模型出发，采用先进的水平集方法跟踪电解液中灯丝的生长。我们将水平集方法与模拟电解质和灯丝中阳离子迁移和电场的方程相结合。为了研究银团簇对开关时间的影响，我们考虑了电解液中的银团簇。

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Advanced simulation of CBRAM devices with the level set method

A TCAD model for Chalcogenide based CBRAM is presented. This model starts from an existing model and uses an advanced level set method to follow the growth of the filament in the electrolyte. We couple the level set method with equations which model the cations migration and the electric field in the electrolyte and in the filament. We take into account silver clusters in the electrolyte in order to study their influence on switching time.

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来源期刊

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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