{"title":"用于极低功率应用的第四组tfet","authors":"Hsu-Yu Chang, J. Woo","doi":"10.1109/SUBVT.2012.6404326","DOIUrl":null,"url":null,"abstract":"Novel source pocket Si Tunnel field effect transistor (TFET) is successfully fabricated by laser annealing. It shows reduced threshold voltage, steep subthreshold swing (46mV/dec), excellent ION/IOFF ratio (>;107) and improved output characteristics due to dramatic reduction of tunneling resistance.","PeriodicalId":383826,"journal":{"name":"2012 IEEE Subthreshold Microelectronics Conference (SubVT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Group IV TFETs for very low power applications\",\"authors\":\"Hsu-Yu Chang, J. Woo\",\"doi\":\"10.1109/SUBVT.2012.6404326\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Novel source pocket Si Tunnel field effect transistor (TFET) is successfully fabricated by laser annealing. It shows reduced threshold voltage, steep subthreshold swing (46mV/dec), excellent ION/IOFF ratio (>;107) and improved output characteristics due to dramatic reduction of tunneling resistance.\",\"PeriodicalId\":383826,\"journal\":{\"name\":\"2012 IEEE Subthreshold Microelectronics Conference (SubVT)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Subthreshold Microelectronics Conference (SubVT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SUBVT.2012.6404326\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Subthreshold Microelectronics Conference (SubVT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SUBVT.2012.6404326","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel source pocket Si Tunnel field effect transistor (TFET) is successfully fabricated by laser annealing. It shows reduced threshold voltage, steep subthreshold swing (46mV/dec), excellent ION/IOFF ratio (>;107) and improved output characteristics due to dramatic reduction of tunneling resistance.
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