Y. Chee, F. Golcuk, T. Matsuura, Chris Beale, James F. Wang, Osama Shanaa
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引用次数: 20
摘要
与CMOS收发器SoC相比,前端模块(FEM)通常采用昂贵的III-V或SiGe技术来提供相对较高的PA输出功率和较低的LNA噪声系数(NF),以实现更大的距离覆盖[1]。WiFi FEM通常被设计为使用线性和低效的PA拓扑(如a类/AB类)的独立实体,导致FEM不能充分利用收发器SoC的全部功能。此外,由于严格的EVM要求,几乎需要10dB的Psat回退,导致传统a类/AB类拓扑在+20dBm输出时的PAE <7%,无论器件技术如何[1-3]。图17.1.1中的CMOS FEM解决了上述问题,并实现了与GaAs/SiGe FEM相当的性能,但在利用收发器的全部功能来增强其性能的同时提供了更高的效率。所提出的FEM集成了一个PA、一个LNA、一个收发开关、一个发射信号强度指示器(TSSI)和一个射频数字预失真(DPD)校准环回路径。它在同一个封装中集成了两个ic。PA、LNA和dpd环回路径在55nm的块体CMOS IC上实现,而T/R开关、PA输出平衡器和TSSI集成在0.18µm的CMOS SOI IC上。
17.1 A digitally assisted CMOS WiFi 802.11ac/11ax front-end module achieving 12% PA efficiency at 20dBm output power with 160MHz 256-QAM OFDM signal
Front-end modules (FEM) typically employ expensive III–V or SiGe technologies to provide relatively higher PA output power and lower LNA noise figure (NF) for larger distance coverage compared to what can be achieved in a CMOS transceiver SoC [1]. The WiFi FEM is typically designed as a standalone entity using linear and inefficient PA topologies, such as Class-A/AB, resulting in an FEM not taking advantage of the full capability of the transceiver SoC. Furthermore, due to the stringent EVM requirement, almost 10dB back-off from Psat is required, resulting in a poor PAE of <7% at +20dBm Pout for the conventional Class-A/AB topologies regardless of device technology [1–3]. The CMOS FEM in Fig. 17.1.1 addresses the above issues and achieves performance comparable to that of GaAs/SiGe FEM but offers higher efficiency while using the full capability of the transceiver to enhance its performance. The proposed FEM integrates a PA, an LNA, a T/R switch, a transmit signal-strength indicator (TSSI) and an RF digital pre-distortion (DPD) calibration loopback path. It has two ICs integrated inside the same package. The PA, the LNA, and the DPD-loopback path are implemented on a 55nm bulk CMOS IC, while the T/R switch, PA output balun, and TSSI are integrated on a 0.18µm CMOS SOI IC.