具有分组DAC电容和双路自引导开关的8位10 ghz 21 mw时交错SAR ADC

Eric Swindlehurst, Hunter Jensen, Alexander Petrie, Yixin Song, Yen-Cheng Kuan, Mau-Chung Frank Chang, Jieh-Tsorng Wu, S. Chiang
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引用次数: 0

摘要

一款采用28纳米CMOS的8位10ghz 8×时间交错SAR ADC,采用对称梳状结构的分组电容,可将底板寄生电容降低三倍。双路自举开关从非线性电容中解耦关键信号,将采样SFDR提高5 dB以上。该ADC在Nyquist的SNDR为36.9 dB,功耗为21 mW, FoM为37 fJ/conv。-step,在具有类似速度和分辨率的adc中最低,并且比最先进的adc提高了2倍以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An 8-bit 10-GHz 21-mW Time-Interleaved SAR ADC With Grouped DAC Capacitors and Dual-Path Bootstrapped Switch
An 8-bit 10-GHz 8× time-interleaved SAR ADC in 28-nm CMOS incorporates an aggressively scaled DAC with grouped capacitors in a symmetrical comb structure to afford a threefold reduction in the bottom-plate parasitic capacitance. A dual-path bootstrapped switch decouples critical signal from nonlinear capacitance to boost the sampling SFDR by more than 5 dB. The ADC demonstrates an SNDR of 36.9 dB at Nyquist while consuming 21 mW, yielding an FoM of 37 fJ/conv.-step, the lowest among the reported ADCs with similar speeds and resolutions and more than 2× improvement from the state-of-the-art.
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