一种兼容CMOS的低功耗超密电容无SOI RAM

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI:10.1109/ISDRS.2003.1272147

P. Fazan, S. Okhonin, M. Nagoga

{"title":"一种兼容CMOS的低功耗超密电容无SOI RAM","authors":"P. Fazan, S. Okhonin, M. Nagoga","doi":"10.1109/ISDRS.2003.1272147","DOIUrl":null,"url":null,"abstract":"This paper presents low power writing mechanisms for the ultra dense capacitor less RAM cell on SOI (silicon-on-insulator). By exploiting band to band tunneling and negative voltages, no current flows in the cell during writing and large programming windows is obtained. First results on data disturb is presented. evidence of a charge pumping related related gate disturb is shown.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"269 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A CMOS compatible low power ultra dense capacitor less SOI RAM\",\"authors\":\"P. Fazan, S. Okhonin, M. Nagoga\",\"doi\":\"10.1109/ISDRS.2003.1272147\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents low power writing mechanisms for the ultra dense capacitor less RAM cell on SOI (silicon-on-insulator). By exploiting band to band tunneling and negative voltages, no current flows in the cell during writing and large programming windows is obtained. First results on data disturb is presented. evidence of a charge pumping related related gate disturb is shown.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"269 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272147\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272147","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种基于SOI(绝缘体上硅)的无电容超密RAM电池的低功耗写入机制。通过利用带间隧道效应和负电压，在写入过程中单元内无电流流动，获得了较大的编程窗口。给出了数据扰动的初步结果。显示了与栅极干扰相关的电荷泵送的证据。

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A CMOS compatible low power ultra dense capacitor less SOI RAM

This paper presents low power writing mechanisms for the ultra dense capacitor less RAM cell on SOI (silicon-on-insulator). By exploiting band to band tunneling and negative voltages, no current flows in the cell during writing and large programming windows is obtained. First results on data disturb is presented. evidence of a charge pumping related related gate disturb is shown.

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International Semiconductor Device Research Symposium, 2003

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