采用28纳米FDSOI CMOS工艺的慢波传输线124-184 GHz放大器

2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications Pub Date : 2016-06-06 DOI:10.1109/GSMM.2016.7500297

D. Parveg, D. Karaca, M. Varonen, A. Vahdati, K. Halonen

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引用次数: 3

摘要

提出了一种采用28纳米FDSOI CMOS技术设计的124 ~ 184 GHz单端放大器。该放大器由四个共源增益级和宽带匹配网络组成，用于输入、输出和级间匹配，采用慢波屏蔽共面波导。该放大器的总功耗为31 mW，在167 GHz时峰值增益为10.1 dB, 3db带宽为61 GHz。

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A 124–184 GHz amplifier using slow-wave transmission lines in 28-nm FDSOI CMOS process

This paper presents a 124 to 184 GHz single-ended amplifier designed in 28-nm FDSOI CMOS technology. The amplifier consists of four common-source gain stages and broadband matching networks for input, output and inter-stage matching employing slow-wave shielded co-planar waveguides. Having a total power consumption of 31 mW, the amplifier achieves a peak gain of 10.1 dB at 167 GHz and a 3-dB bandwidth of 61 GHz.

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2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications

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