{"title":"多光子电离光谱对SiH3和SiH自由基的灵敏检测和分析","authors":"J. W. Hudgens, B. Tsai, Russell D. Johnson","doi":"10.1364/laca.1990.mb5","DOIUrl":null,"url":null,"abstract":"The free radicals, silyl (SiH3) and silylidyne (SiH), play important roles at the gas-surface interface during the chemical vapor deposition (CVD) of silicon films from silane, SiH4. We will report recent experiments that enable resonance enhanced multiphoton ionization (REMPI) spectroscopy to detect these radicals with great sensitivity. These newly developed REMPI detection methods should allow experimentalists to measure the relative concentration profile of SiH3, SiH, and Si radicals in the same experimental configuration and under the same conditions. For the SiH3 radical the new spectra will also permit temperature measurements.","PeriodicalId":252738,"journal":{"name":"Laser Applications to Chemical Analysis","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Sensitive Detection and Analyses of SiH3 and SiH Radicals Using Multiphoton Ionization Spectroscopy\",\"authors\":\"J. W. Hudgens, B. Tsai, Russell D. Johnson\",\"doi\":\"10.1364/laca.1990.mb5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The free radicals, silyl (SiH3) and silylidyne (SiH), play important roles at the gas-surface interface during the chemical vapor deposition (CVD) of silicon films from silane, SiH4. We will report recent experiments that enable resonance enhanced multiphoton ionization (REMPI) spectroscopy to detect these radicals with great sensitivity. These newly developed REMPI detection methods should allow experimentalists to measure the relative concentration profile of SiH3, SiH, and Si radicals in the same experimental configuration and under the same conditions. For the SiH3 radical the new spectra will also permit temperature measurements.\",\"PeriodicalId\":252738,\"journal\":{\"name\":\"Laser Applications to Chemical Analysis\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Laser Applications to Chemical Analysis\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/laca.1990.mb5\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Laser Applications to Chemical Analysis","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/laca.1990.mb5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Sensitive Detection and Analyses of SiH3 and SiH Radicals Using Multiphoton Ionization Spectroscopy
The free radicals, silyl (SiH3) and silylidyne (SiH), play important roles at the gas-surface interface during the chemical vapor deposition (CVD) of silicon films from silane, SiH4. We will report recent experiments that enable resonance enhanced multiphoton ionization (REMPI) spectroscopy to detect these radicals with great sensitivity. These newly developed REMPI detection methods should allow experimentalists to measure the relative concentration profile of SiH3, SiH, and Si radicals in the same experimental configuration and under the same conditions. For the SiH3 radical the new spectra will also permit temperature measurements.
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