1.3、MOCVD制备基于Ge/GaAs异质集成的1.55 μm光电探测器

2020 International Conference on UK-China Emerging Technologies (UCET) Pub Date : 2020-08-01 DOI:10.1109/UCET51115.2020.9205465

M. Xiao, S. Gong, X. Zheng, Yunjiang Jin

{"title":"1.3、MOCVD制备基于Ge/GaAs异质集成的1.55 μm光电探测器","authors":"M. Xiao, S. Gong, X. Zheng, Yunjiang Jin","doi":"10.1109/UCET51115.2020.9205465","DOIUrl":null,"url":null,"abstract":"In this work, p-Ge/GaAs hetero-epitaxy was studied by MOCVD and a p-Ge/i-GaAs/n-GaAs photodetector structure was fabricated aiming at 1.3, 1.55 $\\mu$m photodetection. The photo-response spectra indicate that the prepared device has quite good performance on dark current and signal on/off ratio, suggesting promising application in optical fiber communication.","PeriodicalId":163493,"journal":{"name":"2020 International Conference on UK-China Emerging Technologies (UCET)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1.3, 1.55 μm photodetector based on Ge/GaAs hetero-integration prepared by MOCVD\",\"authors\":\"M. Xiao, S. Gong, X. Zheng, Yunjiang Jin\",\"doi\":\"10.1109/UCET51115.2020.9205465\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, p-Ge/GaAs hetero-epitaxy was studied by MOCVD and a p-Ge/i-GaAs/n-GaAs photodetector structure was fabricated aiming at 1.3, 1.55 $\\\\mu$m photodetection. The photo-response spectra indicate that the prepared device has quite good performance on dark current and signal on/off ratio, suggesting promising application in optical fiber communication.\",\"PeriodicalId\":163493,\"journal\":{\"name\":\"2020 International Conference on UK-China Emerging Technologies (UCET)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on UK-China Emerging Technologies (UCET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/UCET51115.2020.9205465\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on UK-China Emerging Technologies (UCET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UCET51115.2020.9205465","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文采用MOCVD技术研究了p-Ge/GaAs异质外延，制备了以1.3,1.55 $\mu$m光探测为目标的p-Ge/i-GaAs/n-GaAs光探测器结构。光响应光谱结果表明，该器件具有良好的暗电流性能和信号开/关比，在光纤通信中具有广阔的应用前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

1.3, 1.55 μm photodetector based on Ge/GaAs hetero-integration prepared by MOCVD

In this work, p-Ge/GaAs hetero-epitaxy was studied by MOCVD and a p-Ge/i-GaAs/n-GaAs photodetector structure was fabricated aiming at 1.3, 1.55 $\mu$m photodetection. The photo-response spectra indicate that the prepared device has quite good performance on dark current and signal on/off ratio, suggesting promising application in optical fiber communication.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 International Conference on UK-China Emerging Technologies (UCET)

自引率

0.00%

发文量