一种新的多量子阱电吸收调制器的理论设计优化

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings Pub Date : 2003-10-14 DOI:10.1109/NUSOD.2003.1259031

M. Sheikhi, S. Emamghoreishi, S. Javadpoor, M. Moravvej-Farshi

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引用次数: 1

摘要

提出了一种基于矩阵法计算InAlAs/InGaAs多量子阱中电吸收的数值模型。该模型简单，适合作为多量子阱电吸收调制器的快速设计工具。给出了量子受限斯塔克效应(QCSE)的完备自洽模型。在静电场存在下求解标量薛定谔方程。考虑量子阱数量、宽度和高度的影响，对重空穴激子峰的位置及其位移进行了数值计算。在计算中首次考虑了量子阱间的耦合效应。

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A new theoretical design optimization of multiple quantum-well electroabsorption modulator

A numerical model for computing electroabsorption in InAlAs/InGaAs multiple quantum well based on a matrix method is presented. The model is made simple to make it suitable as fast-design-tool for multiple quantum well electroabsorption modulators. A complete and self-consistent model of the quantum confined Stark effect (QCSE) is also presented. Scalar Schrodinger equation is solved in the presence of static electric field. The position of heavy hole (hh) exciton peak and its shift (stark shift) is calculated numerically, considering the effect of the number, width and height of quantum wells. Coupling effect between the quantum wells in the calculations was considered for the first time.

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IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings

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