{"title":"一种测定GaN hemt功耗相关热阻的简单方法","authors":"Jun Liu, Lingling Sun, Zhiping Yu, M. Condon","doi":"10.1109/MWSYM.2011.5972752","DOIUrl":null,"url":null,"abstract":"A simple method to determine the power dissipation dependent thermal resistance and the junction temperature of a power AlGaN/GaN HEMT proposed. The method is based on a rigorous mathematical treatment of the nonlinear characteristics of thermal resistance. It is hence suitable for modeling of transistors operating at any power densities. This method has been verified by an accurate predicting of junction temperature of an 8×80µm×0.3µm AlGaN/GaN HEMT, fabricated with an in-house AlGaN/GaN HEMTs technology.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"40 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A simple method to determine power-dissipation dependent thermal resistance for GaN HEMTs\",\"authors\":\"Jun Liu, Lingling Sun, Zhiping Yu, M. Condon\",\"doi\":\"10.1109/MWSYM.2011.5972752\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple method to determine the power dissipation dependent thermal resistance and the junction temperature of a power AlGaN/GaN HEMT proposed. The method is based on a rigorous mathematical treatment of the nonlinear characteristics of thermal resistance. It is hence suitable for modeling of transistors operating at any power densities. This method has been verified by an accurate predicting of junction temperature of an 8×80µm×0.3µm AlGaN/GaN HEMT, fabricated with an in-house AlGaN/GaN HEMTs technology.\",\"PeriodicalId\":294862,\"journal\":{\"name\":\"2011 IEEE MTT-S International Microwave Symposium\",\"volume\":\"40 3\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2011.5972752\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2011.5972752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A simple method to determine power-dissipation dependent thermal resistance for GaN HEMTs
A simple method to determine the power dissipation dependent thermal resistance and the junction temperature of a power AlGaN/GaN HEMT proposed. The method is based on a rigorous mathematical treatment of the nonlinear characteristics of thermal resistance. It is hence suitable for modeling of transistors operating at any power densities. This method has been verified by an accurate predicting of junction temperature of an 8×80µm×0.3µm AlGaN/GaN HEMT, fabricated with an in-house AlGaN/GaN HEMTs technology.
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