氪离子辐照碳化硅基复合材料的微观结构和相态

V. Uglov, V. Kholad, P. Grinchuk, M. Kiyashko, I. A. Ivanov, A. Kozlovskiy, M. Zdorovets
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引用次数: 0

摘要

用能量为280 keV的氪离子辐照碳化硅基复合材料,辐照量为1∙1013-5∙1015 cm-2。辐照导致了晶格的辐照生长,以及近表面层的非晶化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microstructure and phase state of a composite based on silicon carbide irradiated with krypton ions
Composite based on silicon carbide was irradiated with krypton ions with an energy of 280 keV fluence 1∙1013–5∙1015 cm-2. Irradiation leads to irradiation growth of the crystal lattice, as well as amorphization of the near-surface layer.
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