一种具有假填充的超宽带CMOS PA,以提高可靠性

Yu-Ting Chang, Y. Ye, C. Domier, Q. Gu
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引用次数: 1

摘要

本文提出了一种采用大块65nm CMOS技术的v波段功率放大器,其峰值增益为14.5 dB, 3db带宽为28.8 GHz (50.8 GHz ~ 79.6 GHz)。该放大器的Psat为15.1 dBm,峰值PAE为18.9%。PA采用三级变压器耦合差分结构,集成输入和输出平衡。整个PA芯的芯片面积为0.31 mm2,功耗约为150mw。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A ultra-wideband CMOS PA with dummy filling for reliability
This paper presents a V-band power amplifier in a bulk 65 nm CMOS technology with the peak gain 14.5 dB and 3-dB bandwidth of 28.8 GHz (50.8 GHz to 79.6 GHz). The PA has demonstrated 15.1 dBm Psat and 18.9 % peak PAE. The PA features three stage transformer coupled differential architecture with integrated input and output baluns. The entire PA core occupies 0.31 mm2 chip area and dissipates about 150 mW.
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