用于移动SoC和3D-IC的嵌入式存储器和电阻性RAM (RRAM)的电路设计挑战

Meng-Fan Chang, P. Chiu, S. Sheu
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引用次数: 23

摘要

移动系统需要高性能和低功耗的SoC或3D-IC芯片来执行复杂的操作,确保小尺寸并确保长电池寿命。在SoC和3D-IC中,经常使用低电源电压(VDD)来抑制动态功耗、待机电流和热效应。此外,降低VDD可以减少器件的电压应力,减缓芯片的老化。然而,嵌入式存储器的低VDD会导致功能故障和低成品率。本文综述了嵌入式存储器(SRAM和ROM)低压电路设计中的各种挑战。它还讨论了新兴的嵌入式内存解决方案。还探讨了移动SoC和3D-IC的替代存储器接口和架构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Circuit design challenges in embedded memory and resistive RAM (RRAM) for mobile SoC and 3D-IC
Mobile systems require high-performance and low-power SoC or 3D-IC chips to perform complex operations, ensure a small form-factor and ensure a long battery life time. A low supply voltage (VDD) is frequently utilized to suppress dynamic power consumption, standby current, and thermal effects in SoC and 3D-IC. Furthermore, lowering the VDD reduces the voltage stress of the devices and slows the aging of chips. However, a low VDD for embedded memories can cause functional failure and low yield. This paper reviews various challenges in the design of low-voltage circuits for embedded memory (SRAM and ROM). It also discusses emerging embedded memory solutions. Alternative memory interfaces and architectures for mobile SoC and 3D-IC are also explored.
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