一种新型单片发射开关双极晶体管(ESBT)在高压变换器中的应用

38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003. Pub Date : 2003-10-12 DOI:10.1109/IAS.2003.1257800

S. Buonomo, C. Ronsisvalle, R. Scollo, S. Musumeci, R. Pagano, A. Raciti

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引用次数: 22

摘要

本文提出了一种基于双极- mosfet级联电路的新型器件。单片器件适用于高压应用。本文从物理结构和电气性能两方面描述了这种功率器件的基本特征，即发射开关双极晶体管(ESBT)组件。讨论了应用领域以及驱动程序的要求。从开关损耗和基极指令电路两方面比较了该器件与MOSFET的优缺点。最后，利用实际的离线电源(正激变换器)作为测试平台对新器件进行了测试，以便为电源变换器设计者提供有关开关行为和功率损耗的有用信息。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new monolithic emitter-switching bipolar transistor (ESBT) in high-voltage converter applications

In this paper a new family of devices, which is based on a bipolar-MOSFET cascode connection, is presented. The monolithic device is suitable for high-voltage applications. The basic features of this power device, the emitter-switching bipolar transistor (ESBT) component, are described both in terms of physical structure and electrical performances. The field of applications along with the driver requirement is discussed too. The advantages and drawbacks of the presented device in terms of both switching losses and base-gate command circuitry are compared with those of a MOSFET. Finally, the new device is tested by using as a workbench an actual off-line power supply (forward converter), in order to carry out useful information for the power converter designer about the switching behavior and the power losses.

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38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003.

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