一种采用$0.25\mu \ mathm {m}$ GaN技术的具有45% PAE的2- 6ghz功率放大器

2019 IEEE Asia-Pacific Microwave Conference (APMC) Pub Date : 2019-12-01 DOI:10.1109/APMC46564.2019.9038206

Shuman Mao, Xiansuo Liu, Yunchuan Guo, Yunqiu Wu, Yuehang Xu

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引用次数: 0

摘要

本文提出了一种采用$0.25\ \mu\ mathm {m}$ GaN HEMT技术设计的两级2- 6ghz高效功率放大器。采用低损耗输出匹配网络(OMN)实现高Q匹配，提高了效率。采用带增益补偿结构的多电平级间匹配网络(ISMN)来提高带宽。结果表明，在连续波(CW)模式下，所设计的GaN功率放大器在2-6 GHz频带范围内可以提供超过45%的PAE和35 dBm的输出功率。芯片的尺寸为$2.2\ mathm {mm}^{\ast}1.6\ mathm {mn}$。

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A 2-6 GHz Power Amplifier with 45% PAE in $0.25\mu \mathrm{m}$ GaN Technology

This paper presents a two-stage 2-6 GHz high efficiency power amplifier designed by $0.25\ \mu\mathrm{m}$ GaN HEMT technology. A low loss output match network (OMN) is used to realize high Q matching thus improve the efficiency. A multilevel inter-stage match network (ISMN) with gain compensation structure is used to improve the bandwidth. Results show that the designed GaN power amplifier can provide over 45% PAE and 35 dBm output power in the frequency band ranging from 2-6 GHz under continuous wave (CW) mode. The size of the chip is $2.2\mathrm{mm}^{\ast}1.6\mathrm{mn}$.

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2019 IEEE Asia-Pacific Microwave Conference (APMC)

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