{"title":"用于测量MOSFET通道电导和阈值电压的标准偏差的测试电路","authors":"K. Terada, M. Sumida","doi":"10.1109/ICMTS.2002.1193172","DOIUrl":null,"url":null,"abstract":"A new test circuit is proposed for measuring the standard deviations of both MOSFET channel conductance and threshold voltage. This test circuit consists of the matrix-shape MOSFET array in which several switches and wiring are added. DC currents flowing through this array are measured, changing the ON/OFF states of the switches, and then the standard deviations are calculated from them.","PeriodicalId":188074,"journal":{"name":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","volume":"163 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A test circuit for measuring standard deviations of MOSFET channel conductance and threshold voltage\",\"authors\":\"K. Terada, M. Sumida\",\"doi\":\"10.1109/ICMTS.2002.1193172\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new test circuit is proposed for measuring the standard deviations of both MOSFET channel conductance and threshold voltage. This test circuit consists of the matrix-shape MOSFET array in which several switches and wiring are added. DC currents flowing through this array are measured, changing the ON/OFF states of the switches, and then the standard deviations are calculated from them.\",\"PeriodicalId\":188074,\"journal\":{\"name\":\"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.\",\"volume\":\"163 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2002.1193172\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2002.1193172","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A test circuit for measuring standard deviations of MOSFET channel conductance and threshold voltage
A new test circuit is proposed for measuring the standard deviations of both MOSFET channel conductance and threshold voltage. This test circuit consists of the matrix-shape MOSFET array in which several switches and wiring are added. DC currents flowing through this array are measured, changing the ON/OFF states of the switches, and then the standard deviations are calculated from them.