P. Rajai, Matthew Straeten, Jiewen Liu, G. Xereas, M. Ahamed
{"title":"掺杂硅MEMS谐振器的温度频率补偿建模","authors":"P. Rajai, Matthew Straeten, Jiewen Liu, G. Xereas, M. Ahamed","doi":"10.1109/ISISS.2018.8358151","DOIUrl":null,"url":null,"abstract":"In this paper, an analytical model is presented to predict the temperature sensitivity of doped silicon MEMS resonator. Temperature coefficients of three elastic constants (C<inf>11</inf>, C<inf>12</inf> and C<inf>44</inf>) were predicted and found in good agreement (∼1%) with the experimental values previously reported in the literature. The model was then extended to find relationship between doping and temperate-compensated frequency. Our model shows that the Lame mode frequency of a MEMS resonator can be compensated via an optimum n-doping of around 4×10<sup>19</sup>cm<sup>−3</sup> for working temperature between −40°C to 100 °C.","PeriodicalId":237642,"journal":{"name":"2018 IEEE International Symposium on Inertial Sensors and Systems (INERTIAL)","volume":"74 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Modeling of temperature frequency-compensation of doped silicon MEMS resonator\",\"authors\":\"P. Rajai, Matthew Straeten, Jiewen Liu, G. Xereas, M. Ahamed\",\"doi\":\"10.1109/ISISS.2018.8358151\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, an analytical model is presented to predict the temperature sensitivity of doped silicon MEMS resonator. Temperature coefficients of three elastic constants (C<inf>11</inf>, C<inf>12</inf> and C<inf>44</inf>) were predicted and found in good agreement (∼1%) with the experimental values previously reported in the literature. The model was then extended to find relationship between doping and temperate-compensated frequency. Our model shows that the Lame mode frequency of a MEMS resonator can be compensated via an optimum n-doping of around 4×10<sup>19</sup>cm<sup>−3</sup> for working temperature between −40°C to 100 °C.\",\"PeriodicalId\":237642,\"journal\":{\"name\":\"2018 IEEE International Symposium on Inertial Sensors and Systems (INERTIAL)\",\"volume\":\"74 6\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on Inertial Sensors and Systems (INERTIAL)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISISS.2018.8358151\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on Inertial Sensors and Systems (INERTIAL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISISS.2018.8358151","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of temperature frequency-compensation of doped silicon MEMS resonator
In this paper, an analytical model is presented to predict the temperature sensitivity of doped silicon MEMS resonator. Temperature coefficients of three elastic constants (C11, C12 and C44) were predicted and found in good agreement (∼1%) with the experimental values previously reported in the literature. The model was then extended to find relationship between doping and temperate-compensated frequency. Our model shows that the Lame mode frequency of a MEMS resonator can be compensated via an optimum n-doping of around 4×1019cm−3 for working temperature between −40°C to 100 °C.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
