基于物质蕴涵逻辑的忆阻器线性反馈移位寄存器

Mehri Teimoory, A. Amirsoleimani, A. Ahmadi, S. Alirezaee, Saeideh Salimpour, M. Ahmadi
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引用次数: 28

摘要

忆阻器作为一种新兴的依赖历史的纳米尺度元件,将在未来的纳米电子计算技术中发挥重要作用。近年来提出了一些基于纯忆阻器和混合忆阻器的实现技术。物质蕴涵逻辑是基于忆阻器的逻辑实现的重要领域之一。本文基于物质蕴涵逻辑实现了一种基于忆阻器的线性反馈移位寄存器。它由8个忆阻器实现,与传统的基于cmos的同类相比,使用的面积大大减少。此外,所提出的基于忆阻器的LFSR电路需要55个计算步骤来生成一个4位数字。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Memristor-based linear feedback shift register based on material implication logic
Memristor as an emerging history dependent nanometer scaled element will play an important role in future nanoelectronic computing technologies. Some pure and hybrid memristor-based implementation techniques have been proposed in recent years. Material implication logic is one of the significant areas for memristor-based logic implementation. In this paper a memristor-based linear feedback shift register is implemented based on material implication logic. It is implemented by 8 memristors which is considerably used less area in comparison with conventional CMOS-based peers. Also the proposed memristor-based LFSR circuit needs 55 computational steps for generating a 4-bits number.
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