T. Sugii, Y. Iba, M. Aoki, H. Noshiro, K. Tsunoda, A. Hatada, M. Nakabayashi, Y. Yamazaki, A. Takahashi, C. Yoshida
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STT MRAM Development and Its Integration with BEOL Process for Embedded Applications
Introduction In this paper, we report the current status of our spintransfer torque magnetic RAM (STT-MRAM) development and its integration with the BEOL process for embedded applications with 300-mm facilities. Our STT-MRAM technology for low power dissipation features a top-pinned magnetic tunnel junction (MTJ), strain-engineering, and a naturally oxidized MgO barrier. Our integration technology features highly selective etching with triple-level resist, Ta hard mask, and a selfaligned contact process. We integrated our MRAM into 300-mm BEOL, where the MTJ is integrated between Cu interconnects. These features are described below.
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