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引用次数: 0
摘要
随着计算机变得越来越大、越来越复杂,对高速刮刮板式存储器的需求也越来越大。此外,尺寸和速度要求增加。H. Amemiya, R. L. Pryor和T. R. Mayhew描述了一种早期记忆,适合用作刮擦板。该存储器每比特使用两个铁氧体核,读取/再生周期时间为200纳秒。最近,G. J. amon和C. Neitzert描述了64字乘20位的薄磁薄膜存储器。这种存储器的读取/再生周期为125纳秒,其速度主要受到电子电路的限制。文献中已经报道了许多其他适合用作刮擦板的存储器和存储器设计。未来需要256到1024个字的存储器,周期时间为50纳秒。因此,开始了一个项目来研究这种制度的可行性。
An experimental 65-nanosecond thin film scratchpad memory system
As computers become larger and more complex, the need for a high-speed scratchpad type memory becomes greater. Furthermore, the size and speed requirements increase. An early memory, suitable for use as a scratchpad, was described by H. Amemiya, R. L. Pryor, and T. R. Mayhew. This memory used two ferrite cores per bit and had a read/regenerate cycle time of 200 nanoseconds. More recently, a 64-word by 20-bit thin magnetic film memory was described by G. J. Ammon and C. Neitzert. This memory had a read/regenerate cycle time of 125 nanoseconds and its speed was limited primarily by the electronic circuitry. A number of other memories and memory designs, suitable for use as scratchpads, have been reported in the literature. Future need for a 256 to 1,024 word memory having a cycle time of 50 nanoseconds has been indicated. A project was therefore initiated to study the feasibility of such a system.