场效应晶体管放大器中闪烁相位调制和幅度调制噪声的研究

Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218) Pub Date : 2001-06-08 DOI:10.1109/FREQ.2001.956186

S.C. Peacock, M.A. Stauffer, A.M. Van Slyke, E. Ferre-Pikal

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引用次数: 5

摘要

本文介绍了在线性场效应晶体管(FET)放大器中将1/f低频噪声上转换为幅度调制(AM)噪声和相位调制(PM)噪声的理论和实验结果。研究了两种用于共源(CS)配置的晶体管:结场效应晶体管(jfet)和金属半导体场效应晶体管(mesfet)。从理论上计算了调幅和调幅对基带电流和电压噪声的灵敏度，并进行了实验测量。本文还研究了一种降低基带噪声的负反馈技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of flicker phase modulation and amplitude modulation noise in field effect transistor amplifiers

We present theoretical and experimental results on up-conversion of 1/f low-frequency noise into amplitude modulation (AM) noise and phase modulation (PM) noise in linear field-effect transistor (FET) amplifiers. Two types of transistors, used in a common source (CS) configuration, were studied: junction field-effect transistors (JFETs) and metal-semiconductor field-effect transistors (MESFETs). AM and PM sensitivities to baseband current and voltage noise are computed from theory and experimentally measured. A negative feedback technique that reduces the baseband noise is also investigated.

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Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)

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